Light-emitting diode with high luminous efficiency

The invention discloses a light-emitting diode with high luminous efficiency, and relates to the technical field of light-emitting diode production. A substrate bottom surface facing a buffering layer is provided with PSS surface patterns with different shapes and appearances. A dislocation blocking layer is disposed below a p electrode, is disposed below an ITO transparent conducting layer in a p electrode arrangement region and extends to a part of an n-type conducting layer. A dislocation line dense region is disposed below the dislocation blocking layer, is disposed below a part of the n-type conducting layer in the p electrode arrangement region, and extends to an unintentional doped layer. A dislocation collection region is disposed below the dislocation blocking layer, thereby reducing the dislocation density of a light-emitting region, improving the quality of epitaxial crystal of the light-emitting region, weakens the Efficiency-Droop effect under a working current, and improving the reliability of the light-emitting diode. The dislocation blocking layer achieves a purpose of improving the current extension effect of the p electrode, and effectively improves the luminous efficiency of the light-emitting diode.