Influence of Uniaxial Pressure on Hot‐Electron Conductivity in n‐Si at Low Temperatures

Investigations of current-voltage characteristics of n-Si along 〈100〉 direction at low temperatures when nde should occur are repeated in detail. In order to verify the inter-valley carrier transfer as origin of current saturation and accompanying oscillations, the valleys are split energetically by uniaxial pressures parallel and perpendicular to the 〈100〉 direction. [Russian Text Ignored]