Insulating films on semiconductors : proceedings of the second international conference, INFOS 81, Erlangen, Fed. Rep. of Germany, April 27-29, 1981

I Si-SiO2 Interface.- Electronic Structure of the Si-SiO2 Interface.- Morphology of the Si-SiO2 Interface.- Influence of Oxidation Parameters on Atomic Roughness at the Si-SiO2 Interface.- Electronic and Optical Properties of SiOX.- Hydrogenation of Defects at the Si-SiO2 Interface.- Stress Behaviour of Hydrogen Annealed Interface States.- On the Si/SiO2 Interface Recombination Velocity.- Optical Excitation of MOS-Interface-States.- II Thin Insulating Films.- Langmuir-Blodgett Films on Semiconductors.- A Study of MIS Structures Prepared Under U1tra-High-Vacuum Conditions.- Electrical Properties of Ultrathin Oxide Layers Formed by DC Plasma Anodization.- Influence of Different Technologies of Metal Deposition and of Oxide Growth on the Electronic Properties of MIS Tunnel Diodes.- Photoelectric Methods as a Tool for the Analysis of Current Flow Mechanism in MIS Tunnel Diodes.- III Charge Injection Into Insulators.- Charge Injection Into Wide Energy Band-Gap Insulators.- Oxide and Interface Charge Generation by Electron Injection in MOS Devices.- Trapping Characteristics in SiO2.- Interface Effects in Avalanche Injection of Electrons into Silicon Dioxide.- Interface State and Charge Generation by Electron Tunneling into Thin Layers of SiO2.- Modelling of Flat-Band Voltage Shift During Avalanche Injection on MOS Capacitors.- Influence of Electron-Phonon Scattering on Photoinjection Into SiO2.- IV Multilayer Structures.- Charge Loss in MANOS Memory Structures.- Surface-State Density Evaluation Problems in MNOS Structures.- Dye-Sensitized Photodischarge of Metal-Dye-Oxide-Silicon (MDOS) and Metal-Dye-Nitride-Oxide-Silicon (MDNOS) Capacitors.- V Interface Characterization Techniques.- EPR on MOS Interface States.- The Non-Equilibrium Linear Voltage Ramp Technique as a Diagnostic Tool for the MOS Structure.- MOS Characterization by Phase Shift Impedance Technique.- Si/SiO2 Properties Investigated by the CC-DLTS Method.- Study of Ellipsometry: The Computation of Ellipsometric Parameters in a Nonuniform Film on Solid Substrate.- VI Breakdown and Instability of the SiO2-Si System.- Breakdown and Wearout Phenomena in SiO2.- Hydrogen-Sodium Interactions in Pd-MOS Devices.- Electrical Behaviour of Hydrogen Ions in SiO2 Films on Silicon.- Chlorine Implantation in Thermal SiO2.- VII Technology.- Deposition Technology of Insulating Films.- Very High Charge Densities in Silicon Nitride Films on Silicon for Inversion Layer Solar Cells.- Silicon Nitride Layers Grown by Plasma Enhanced Thermal Nitridation.- Buried Oxide Layers Formed by Oxygen Implantation for Potential Use in Dielectrically Isolated ICs.- VIII Laser Processing.- Properties of Patterned and CW Laser-Crystallized Silicon Films on Amorphous Substrates.- SiO2 Interface Degradation and Minority Carrier Lifetime Effects of Laser Beam Processing.- Laser-Induced Crystallization in Ge Films and Multilayered Al-Sb Films.- IX Transport Properties in Inversion Layers.- Subband Physics with Real Interfaces.- Transport Properties of Carriers at Oxide-Hg1?xCdx Te Interface.- Role of Interface States in Electron Scattering at Low Temperatures.- Neutral Scattering Centers Near the Si/SiO2-Interface of MOSFET Devices Prepared by TCE Oxidation.- X Films on Compound Semiconductors.- Native Oxide Reactions on III-V Compound Semiconductors.- MISFET and MIS Diode Behaviour of Some Insulator-InP Systems.- Plasma Anodised Alumina Films in GaAs and InP MIS Structures.- Composition Changes During Oxidation of AIIIBV Surfaces.- RF-Sputtering of Silicon Nitride Layers on GaAs Substrates: Characterization of an Intermediate Layer Between the Substrate and the Deposited Film.- Surface Analytical and Capacitance-Voltage Characterization of Anodic Oxide Films on Hg0.8Cd0.2Te.- Surface and In-Depth Analysis of Anodic Oxide-Layers on Cd0.2Hg0.8Te.- Impact of Insulator Charge Trapping on I.R.C.I.D. Transfer Efficiency.- Index of Contributors.