Method for growing aluminium nitride monocrystal

Disclosed is a method for growing an aluminium nitride monocrystal, wherein a temperature curve and a pressure curve during crystal growth are simple and controllable; a crystal grows on the surface of an aluminium nitride sintered body, and the grown aluminium nitride monocrystal has almost no defects therein; a crucible is prepared using a tungsten material, with few impurities being introduced; an aluminium nitride monocrystal, the maximum size thereof being on the centimetre scale, can be obtained; and the costs of growing a crystal are lower.