Performance Projection of 500V – 5kV AlGaAs/GaAs Vertical Polarization and Doped Superjunction (PDSJ) Devices

We have quantitatively evaluated the performance of AlGaAs/GaAs vertical polarization and doped superjunction (PDSJ) devices in 500V – 5kV range. AlGaAs/GaAs vertical PDSJ devices have 500x and 10000x lower drift region R on, sp than GaAs unipolar 1D limit, and 10x and 400x lower than 2H-GaN unipolar 1D limit at blocking voltages of 500V and 5kV, respectively. Compared to conventional doped p/n superjunction (SJ) devices in GaAs and 2H-GaN, 25x and 5x lower drift region R on, sp are demonstrated in AlGaAs/GaAs vertical PDSJ devices respectively. Actual AlGaAs/GaAs vertical PDSJ diodes and field effect transistors, are demonstrated to have 8x and 4x lower R on, sp than 2H-GaN conventional doped SJ, and 5x and 3x lower than AlGaN/GaN vertical PSJ devices, with breakdown voltage of 500V and 5kV respectively.