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Enhanced Intrinsic Gain (gm/gd) of PMOSFETs with a Si
Enhanced Intrinsic Gain (gm/gd) of PMOSFETs with a Si
2002
A.-C. Lindgren
P.-E. Hellberg
M. von Haartman
D. Wu
C. Menon
S.-L. Zhang
M. Östling
Keywords:
Analytical chemistry
Electronic engineering
Materials science
Transconductance
Annealing (metallurgy)
Breakdown voltage
Silicon-germanium
Voltage
Strained silicon
Microelectronics
intrinsic gain
Correction
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