Annealing effects on Ga‐doped ZnO thin films grown by atmospheric spray pyrolysis using diethylzinc solution

Polycrystalline a-axis oriented Ga-doped ZnO thin film could be grown on glass substrate by a conventional atmospheric spray pyrolysis at 150 °C using diethylzinc-based solution. The n-type Ga-doped ZnO thin film had a resistivity of 1.5 × 10−3 Ω cm, a carrier concentration of 2.0 × 1020 cm−3 and a mobility of 20.0 cm2 (Vs)−1 at an optimal Ga content of 2 wt.% upon hydrogen annealing at 450 °C. It was assumed that an increase of the n-type carrier concentration is due to increase oxygen vacancies by reacting hydrogen and oxygen in ZnO from X-ray photoelectron spectroscopy.