Thermally stimulated current studies of radiation defects in GaP crystals

By TSC measurement on Schottky barriers the main native radiation defects are found, which cause the conductivity compensation in GaP crystals at electron irradiation: the electron traps with Ec — 1.24 eV level (D-centre) and the hole traps with Ev + 1.43 and Ev + 1.56 eV levels (M- and L-centres, respectively). Their annealing behaviour is investigated and the form of the (D + M) centres is found. It is shown that the main radiation defects form stable complexes with impurities and inadvertent centres. The radiation defect nature is discussed, the D- and M-centres are identified as phosphorus and gallium vacancies, respectively. [Russian Text Ignored].