Determination of the position of the. pi. -. nu. -junction in epitaxial structures of gallium arsenide doped with iron

An investigation of the distribution of the electrolyte-semiconductor capacitance barrier over the thickness of epitaxial layers of gallium arsenide doped with iron on a low-resistance substrate is described. It is shown that measurements of the barrier capacitance at low frequencies enables the position of the π-ν-junction, formed at the boundary of separation of the epitaxial layer and the substrate, to be accurately determined.