Copper-platinum alloy wire for connecting in semiconductor apparatus

The invention relates to a copper-platinum alloy wire for connecting in a semiconductor apparatus. The copper-platinum alloy wire can improve a secondary joining property, prevent chip crack in ball bonding and improve ring formation performance in copper wires for the ball bonding. During preparing element wires of continuous casting of a fusing copper-platinum alloy containing high-purity copper (Cu), by mass, 0.1-2.0 % of platinum (Pt), 1-10 ppm sulphur (S) as a non-metal element, 10-150 ppm oxygen (O), optionally together with 1-5 ppm phosphorus (P), a very thin copper layer without the platinum is formed because of segregation, is subsequently oxidized in the atmosphere and a 6-2 nm oxide film is formed on a surface layer of the wires after continuous wire drawing is carried out. According to the joining wires of 77-105 Hv Vickers hardness, the uniform oxide film improves the secondary joining property, the elements added to a matrix restrain dynamic strength during ball bonding, so that aluminum splash is prevented and static strength incapable of leading to inclination is maintained.