A versatile and compact high-intensity electron beam for multi-kGy irradiation in nano- or micro-electronic devices

A compact low-energy and high-intensity electron source for material aging applications is presented. A laser-induced plasma moves inside a 30 kV diode and produces a 5 MW electron beam at the anode location. The corresponding dose that can be deposited into silicon or gallium samples is estimated to be 25 kGy per laser shot. The dose profile strongly depends on the cathode voltage and can be adjusted from 100 nm to 1 μm. With this versatile source, a path is opened to study micro- or nano-electronic components under high irradiation, without the standard radioprotection issues.A compact low-energy and high-intensity electron source for material aging applications is presented. A laser-induced plasma moves inside a 30 kV diode and produces a 5 MW electron beam at the anode location. The corresponding dose that can be deposited into silicon or gallium samples is estimated to be 25 kGy per laser shot. The dose profile strongly depends on the cathode voltage and can be adjusted from 100 nm to 1 μm. With this versatile source, a path is opened to study micro- or nano-electronic components under high irradiation, without the standard radioprotection issues.