Modeling photoexcited carrier interactions in a solid sphere of a semiconductor material based on the photothermal Moore–Gibson–Thompson model

Semiconductor materials, which are the aim of this study, are among the most recent advanced materials in the infrared and microwave domains. The reason for focusing on semiconducting elastic materials stems from their abundance in nature and also their numerous benefits in mechanical engineering and cotemporary physics. This work intends to provide a theoretical framework by considering the effects of thermal and electronic elastic deformation in a semiconductor medium during the exciting thermo-photovoltaic process. To this end, a modified photothermal model, in which the heat conduction is represented by the Moore–Gibson–Thompson (MGT) equation, is established by incorporating a relaxation parameter into the Green–Naghdi type III concept. The proposed model is used to investigate the interactions between plasma, thermal and elastic processes through a solid sphere of semiconductor material subject to a thermal shock in conjunction with an external magnetic field. The influence of thermal and carrier lifetime parameters on different physical properties of silicon material is graphically illustrated using theoretical simulated results by employing the Laplace technique.