Electrical properties of pure In[sub 2]O[sub 3] and Sn-doped In[sub 2]O[sub 3] single crystals and ceramics

The transport properties of undoped and Sn-doped In[sub 2]O[sub 3] (ITO) single crystals prepared by a flux method are reported. Hall measurements are detailed: they show that the mobility increases as the Sn dopant concentration increases. A maximum value of 100 cm[sup 2]V[sup [minus]1]s[sup [minus]1] is measured with an electron concentration of about 1.6 [times] 10[sup 20]cm[sup [minus]3]. However, at high dopant concentration the mobility decreases again and the presence of neutral entities such as (SnO)[sub x] is expected to be responsible for this behavior. Some results dealing with undoped and Sn- or Pb-doped In[sub 2]O[sub 3] ceramics are also presented and discussed.