A method of manufacturing semiconductor devices with generating and annealing of radiation-induced crystal defects

The generation of crystal defects auxiliary (212) is induced in a semiconductor substrate (500). Then, the semiconductor substrate (500) is vorausgeheilt at a temperature above a dissociation temperature at which the auxiliary crystal defects (212) are transformed into defect complexes (219), which may be electrically inactive. Then, protons can be implanted into the semiconductor substrate (500) to induce the generation of radiation induced main crystal defects (222). The defect complexes (219) can increase the effectiveness of the formation of particles correlated dopants due to radiation induced main crystal defects (222).