Equilibrium and non-equilibrium gap state distribution in a-Si:H

Based on weak-bond to dangling-bond conversion, a complete quantitative solution for the gap state distribution in a-Si:H under general non-equilibrium conditions is presented. In this picture the DOS profile is, apart from basic structural bounds given by the Gaussian spread of available defect energies, completely determined by free carrier concentrations and the resulting occupation functions in the gap. All metastable changes in the gap state density and distribution can be quantitatively explained by deviations of free carrier concentrations under the respective non-equilibrium conditions.