XPS Studies on the Oxidation Behavior of SiC Particles

Abstract An X-ray photoelectron spectroscopic study has been carried out on both oxidized and as-received SiC specimens. Oxidation of SiC was performed in the temperature range 900-1100°C. It has been observed that a native oxide layer of silicon (SiO 2 ) exists on the surface of as-received SiC particles and that static oxidation of SiC increases the thickness of this oxide layer. It has also been observed that at a given temperature SiC particle surfaces are oxidized to a greater extent as the time of oxidation is increased. Chemical states are identified from the measured values of Auger parameters. Specimens studied were found to contain extraneous carbon in addition to carbide carbon.