Luminescence from electron-irradiated sapphire

Point defects have been produced by electron irradiation in single-crystal α-Al 2 O 3 from two different sources. Time-resolved luminescence spectroscopy has been used to study emission spectra and atomic-displacement thresholds for the defects. An emission band at 3.8 eV is presentin only one of the crystals while a band at 4.2 eV is observed in both crystals. The former is probably due to F + -center emission and the latter possibly arises from an F-center transition. Emission kinetics are consistent with detrapping of electrons from two shallow traps