A study of GaAsSb/InAlAs interfaces grown by molecular‐beam epitaxy

Solid source molecular‐beam epitaxy was used to grow GaAsSb wells of various thicknesses with InAlAs barriers nominally lattice‐matched to InP substrates. As‐grown quantum wells (QWs) were measured by photoluminescence (PL) to have a monotonic increase in PL peak energy for a decrease in GaAsSb well thickness, indicating QW confinement. Growth interrupts at the GaAsSb/InAlAs interface, using arsenic and/or antimony overpressure, were found to degrade material quality as measured by PL. Thermal annealing up to the substrate growth temperature had no effect on the QW PL peak energies.