Realisation of submicron gate MESFETs using standard optical photolithography

Submicron gate MESFETs were realised in GaAs-based structures using a shadow technique and optical photolithography. F/sub T/ of 30 and 50 GHz are obtained with 0.5 and 0.3 /spl mu/m MESFETs. 0.3 /spl mu/m MESFETs showed F/sub max/ up to 100 GHz.