SiC and GaN Based Transistor and Circuit Advances
2004
Significant progress has been made in the
development of SiC MESFETs and MMIC power
amplifiers manufactured on 3-inch high purity semiinsulating
(HPSI) 4H-SiC substrates. Wide bandwidth
circuits using both 10 Watt and 60 watt MESFETs are
presented. These MESFETs show no degradation after
RFHTOL at a baseplate of 90°C for 4000 hours. High
power SiC MMIC amplifiers are shown with excellent yield
and repeatability using a released foundry process. GaN
HEMTs on HPSI SiC are reported with >30 W/mm RF
output power density, and 10 GHz PAE of 72% is also
demonstrated for lower voltage devices. Finally, a GaN
HEMT operating life of over 500 hours at a TJ =160°C is
also reported.
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