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Substrate dependence of current-voltage characteristics in AlGaN/GaN Hall devices
Substrate dependence of current-voltage characteristics in AlGaN/GaN Hall devices
2021
Daiki Tanaka
Akio Wakejima
Yuji Ando
Jun Suda
Keywords:
algan gan
High-electron-mobility transistor
Materials science
current voltage
Gallium nitride
Optoelectronics
Semiconductor
substrate
Correction
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