Resistive switching behaviors of Au/CZO/FTO/glass heterostructures grown by magnetron sputtering

Abstract Ca doped ZnO (CZO) films, deposited on FTO/glass substrate by radio frequency magnetron sputtering technology, were ex-situ annealed at O2 atmosphere with temperature of 300 °C, 500 °C, 600 °C and 700 °C, respectively. Both crystallinity and resistance switching behaviors for CZO films were influenced by changing the annealing temperature, particularly the heterostructures after 600 °C annealing treatment presents excellent and repeatable resistance switching characteristics. The high/low resistance ratio of which could reach to two orders of magnitude with bias voltage of −0.5 V, and there is no obvious fatigue effect observed after 100 times cycle measurement. Moreover, we demonstrated that the corresponding conduction mechanism could be ascribed to the trap-controlled space charge limited current conduction and Au/CZO Schottky-like barrier.