MBE-grown nanoheterostructures with increased electron mobility
2012
Multilayered nitride heterostructures AlN/AlGaN/GaN/AlGaN are grown using a Nanofab-100 multichamber domestic complex involving a STE3N3 specialized installation of molecular beam epitaxy. The obtained heterostructures have high structural quality, smooth morphology, and a low dislocation density, which demonstrates the high potential of the nanotechnological complex.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
3
References
1
Citations
NaN
KQI