Manipulating charge density wave order in monolayer 1 T − TiSe 2 by strain and charge doping: A first-principles investigation

We investigate the effects of the in-plane biaxial strain and charge doping on the charge density wave (CDW) order of monolayer $1T\ensuremath{-}{\mathrm{TiSe}}_{2}$ by using the first-principles calculations. Our results show that the tensile strain can significantly enhance the CDW order, while both compressive strain and charge doping (electrons and holes) suppress the CDW instability. The tensile strain may provide an effective method for obtaining higher CDW transition temperature on the basis of monolayer $1T\ensuremath{-}{\mathrm{TiSe}}_{2}$. We also discuss the potential superconductivity in charge-doped monolayer $1T\ensuremath{-}{\mathrm{TiSe}}_{2}$. Controllable electronic phase transition from the CDW state to the metallic state or even the superconducting state can be realized in monolayer $1T\ensuremath{-}{\mathrm{TiSe}}_{2}$, which makes $1T\ensuremath{-}{\mathrm{TiSe}}_{2}$ possess a promising application in controllable switching electronic devices based on CDW.