Temperature-Dependence of High-Gain Operation in GaAs Photoconductive Semiconductor Switch at 1.6 $\mu \text{J}$ Excitation

This letter reports the temperature-dependence of high-gain operation in semi-insulating GaAs photoconductive semiconductor switches at 1.6 $\mu \text{J}$ laser diode excitation. Under the excitation of two different spot patterns, the electric field threshold for high-gain operation is investigated by varying the temperature. In addition, the switching characteristics dependence on temperature are also studied under the perpendicular spot excitation.