Extraction of lateral device parameters and channel doping profile of vertical double-diffused MOS transistors
1996
Abstract An extraction method for device dimensions and the lateral channel doping profile of a vertical double-diffused MOS transistor has been developed. Using C - V characterization and two-dimensional numerical analysis, the lateral device structure parameter could be extracted. The extracted device parameters are in good agreement with the expected values for a fabricated device sample. The proposed method in this paper can be very useful for analysing the electrical characteristics of VDMOS transistors.
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