Femtosecond Laser Annealing of Multilayer Thin-Film Structures Based on Amorphous Germanium and Silicon

The processes of femtosecond laser annealing of thin-film multilayer structures based on amorphous silicon and germanium produced by plasma-chemical deposition on a glass substrate have been studied. The formation of periodic structures on the surface of irradiated films has been detected by the scanning electron microscopy method. Analysis of Raman spectra has shown that amorphous germanium crystallizes and a mixing of germanium and silicon layers depending on the pulse energy density occurs in the absence of amorphous silicon layers crystallization as a result of exposure to femtosecond laser pulses.