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AlNパシベーション層とNH3遠隔後プラズマ処理をしたIn0.53Ga0.47As MOSFETの電気的解析とPBTI信頼性
AlNパシベーション層とNH3遠隔後プラズマ処理をしたIn0.53Ga0.47As MOSFETの電気的解析とPBTI信頼性
2016
Chang Po-Chun
Luc Quang Ho
Lin Yueh-Chin
Liu Shih-Chien
Lin Yen-Ku
M Sze Simon
Chang Edward Yi
Keywords:
Chemical physics
Physics
Electronic engineering
Engineering physics
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