Demonstration of high frequency and 10A operation in 12V 1 chip DC/DC converter IC using bump technology

This paper presents 12 V 10A 1 chip DC/DC converter IC based on the low cost 0.6 mum BiCD process. The chip adopted low impedance metal bump technology and a high speed gate driving technique for large LDMOS, what we call "distributed driver circuit". The fabricated chip achieves that the on resistance of 20 V output LDMOS is 9.7mOmega(@drain current=5A, gate voltage=5 V) and the maximum efficiency is 88.9% at output current 5A when the input voltage, the output voltage and switching frequency is 12 V, 1.3 V and 780 KHz, respectively.