Precursor composition for oxide semiconductor, thin film transistor array panel including oxide semiconductor, and manufacturing method of thin film transistor array panel including oxide semiconductor

According to one embodiment of the present invention, a thin film transistor substrate includes: a semiconductor layer including a metal arranged on an insulation substrate; a gate electrode overlapped with the semiconductor layer; and a source electrode and a drain electrode which are overlapped with the semiconductor layer. The metal contained inside the semiconductor layer comprises: indium, zinc and tin, and the molar ratio (R) of indium in metals contained in the semiconductor layer is approximately less than 20%. More specifically, the molar ratio (R) of indium in metals contained in the semiconductor layer is approximately 5-13%.