A 300mm CMOS-Compatible PECVD Silicon Nitride Platform for Integrated Photonics with Low Loss and Low Process Induced Phase Variation

Low loss PECVD silicon nitride waveguides at 905 nm (0.2 dB/cm) and 532 nm (1.36 dB/cm) wavelengths are reported. Efficacy of phase variation measurements for identifying process conditions for optical phased array fabrication is demonstrated.