High‐power, high‐speed 1.3‐μm semi‐insulating‐blocked distributed‐feedback lasers

We describe a high‐performance 1.3‐μm InGaAsP/InP distributed feedback buried heterostructure laser which is compatible with all‐vapor‐phase growth technology. Current confinement is provided by metalorganic vapor‐phase growth of semi‐insulating InP blocking layers. The laser has a small‐signal bandwidth of 12.5 GHz, a large signal digital capability at 16 Gb/s, and maintains single‐frequency operation to output powers as high as 23 mW.