W-Band Synthesized Modulator and Demodulator with Wideband Performance in 65-nm CMOS

A high image-rejection in-phase/quadrature (IQ) modulator and a wideband demodulator with large dynamic range operating in W-band is implemented in 65-nm CMOS technology. The modulator demonstrates a flat conversion gain of 12.5±0.7dB, a minimum image-rejection ratio of 40 dBc and a maximum LO-to-RF leakage of 38 dB from 90 to 98 GHz. The conversion gain of the demodulator is digitally controlled from 15 to 46 dB with a noise figure from 13.5 to 11.5 dB and an input 1dB compression point (IP1dB) from −13 to −39 dBm. The modulator and the demodulator are synthesized by two on-chip single-pole-double-throw (SPDT) switches and one IF switch. The entire system occupies 1.4 mm2 chip area with a total power consumption of 165 mW.