$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

We demonstrate a $\beta $ -Ga 2 O 3 MOSFET with record-high transconductance ( ${g}_{m}$ ) of 21 mS/mm and extrinsic cutoff frequency ( ${f}_{T}$ ) and maximum oscillating frequency ( ${f}_{\max }$ ) of 3.3 and 12.9 GHz, respectively, enabled by implementing a new highly doped ohmic cap layer with a sub-micron gate recess process. RF performance was further verified by CW Class-A power measurements with passive source and load tuning at 800 MHz, resulting in ${P}_{{OUT}}$ , power gain, and power-added efficiency of 0.23 W/mm, 5.1 dB, and 6.3%, respectively. These preliminary results indicate potential for monolithic or heterogeneous integration of power switch and RF devices using $\beta $ -Ga 2 O 3 .