GaAs/AlGaAs Quantum Well Infrared Detectors with an Integral Silicon Grating

Single quantum well GaAs/AlGaAs infrared photodetectors (QWIPs) with an integral silicon grating have been fabricated. An enhancement of radiation coupling efficiency over a 45° bevel device is observed at 77 K. In addition, this technology enables the device to detect normally incident infrared radiation from the substrate side and makes possible the practical packaging of detector arrays.