The temperature dependence of single-event transients in 90-nm CMOS dual-well and triple-well NMOSFETs

This paper investigates the temperature dependence of single-event transients (SETs) in 90-nm complementary metal—oxide semiconductor (CMOS) dual-well and triple-well negative metal—oxide semiconductor field-effect transistors (NMOSFETs). Technology computer-aided design (TCAD) three-dimensional (3D) simulations show that the drain current pulse duration increases from 85 ps to 245 ps for triple-well but only increases from 65 ps to 98 ps for dual-well when the temperature increases from −55 °C to 125 °C, which is closely correlated with the NMOSFET sources. This reveals that the pulse width increases with temperature in dual-well due to the weakening of the anti-amplification bipolar effect while increases with temperature in triple-well due to the enhancement of the bipolar amplification.