Nitrogen compound semiconductor light emitting device and manufacturing method

The present invention provides a n-type layer made of AlGaN, an active layer and a p-type layer composed of an AlGaInN, radiation emission peak wavelength of 400nm or less ultraviolet light, and high-intensity nitrogen compound semiconductor light emitting device and a manufacturing method. The present invention is a nitrogen compound semiconductor light emitting element having an n-type layer, an active layer and a p-type layer, the active layer is made comprises AlGaInN, and the emission peak wavelength of 400nm or less nitrogen compound semiconductor layer, n-type layer having made of AlGaN n-type AlGaN layer and the above protective layer 5nm GaN does not contain Al, and the protective layer is formed on the active layer. Manufacturing method comprising: growing a substrate temperature at a high temperature above 1000 ℃ n-type AlGaN layer; GaN grown on the protective layer does not contain more than 5nm Al; and a step of interrupting the growth of the substrate temperature is decreased, the temperature of the substrate lower than 1000 ℃ at a low temperature, the step of forming an active layer on the protective layer.