The Distribution Measurement of the Photo-induced Plasma in Semiconductor by Near-field Scanning Microwave Microscopy

The photo-induced plasma in semiconductor is the fundamental property of the photoelectric phenomenon. The optical illumination of an intrinsic silicon wafer creates inhomogeneous electron-hole plasma in the illuminated area. In this work, an imaging method is proposed to measure the distribution of photo-induced plasma in silicon by a near-field scanning microwave microscopy. The method is implemented by imaging the distributions of photo-induced plasma on high resistance silicon wafer under laser illumination. It is therefore demonstrated to be an effective optoelectronic characteristic method for semiconductor at microwave frequency.