SILICON-INTERSTITIAL-OXYGEN-INTERSTITIAL COMPLEX AS A MODEL OF THE 450 C OXYGEN THERMAL DONOR IN SILICON

The complex of a divalent silicon interstitial and a pair of adjacent oxygen interstitials is proposed as the core of the 450°C oxygen thermal donor in silicon. The proposal is supported by theoretical calculations which suggest that this complex is stable relative to the self-interstitial and two separated oxygen interstitials, and that it has a doubly occupied level close to the computed conduction-band edge