Extremely high quantum efficiency (86%) operation of AlGaInP visible laser diode with lateral leaky waveguide structure

AlGaInP visible laser diode with lateral leaky waveguide structure has been demonstrated for the first time. The laser has differential quantum efficiency as high as 43% from one facet without coating in addition to stable fundamental transverse‐mode oscillation. The high differential quantum efficiency is due to the propagation loss as low as 4.2 cm−1 of this laser, which is the lowest value for AlGaInP visible diode to the best of our knowledge. This laser can be successfully fabricated by selective growth of AlGaInP quarternary alloy.