Formation and Characterization of PbxCd1-xS Interlayer for PbS/CdS/ZnS Quantum Dots Sensitized Solar Cells

PbxCd1-xS quantum dots (QDs) was successfully deposited on TiO2 mesoporous film as TiO2 mesoporous photoanode using successive ionic layer adsorption and reaction (SILAR) method for quantum dot sensitized solar cells (QDSSCs). Quantum dot sensitized solar cells (QDSSCs) were prepared by sandwiching the TiO2 mesoporous photoanode with Cu2S counter electrode. Single layer of PbxCd1-xS, PbS and CdS and multilayer of PbS/CdS/ZnS as well as multilayer PbS/PbxCd1-xS/CdS/ZnS were prepared for characterizations. The characterizations including X-ray Diffraction Spectroscopy (XRD), Field Emission Scanning Electron Microscopy (FESEM), UV-visible spectrophotometer and Current-density voltage (J-V) measurement were carried out to study the effects of number of SILAR cycles of PbxCd1-xS interlayer for molar fraction, x of 0.2 in QDSSCs. PbxCd1-xS interlayer with four SILAR cycles is incorporated between PbS and CdS layer will increase the efficiency in QDSSCS.