A Siliziumkarbidvorrichtung and a method for forming a Siliziumkarbidvorrichtung

A Siliziumkarbidvorrichtung has a silicon carbide substrate, an inorganic Passivierungsschichtstruktur and a molding material layer. The inorganic Passivierungsschichtstruktur covering a main surface of the silicon carbide substrate at least partially laterally, and the molding material layer is disposed adjacent to the inorganic Passivierungsschichtstruktur.