The dependence of the QDLED performance on the location of colloidal quantum dots

All types of light emitting diodes (LEDs) are desirable because of their widespread applications. The light emitting diode based on quantum dots (QDLEDs) have a lot of unique properties attracted more attention. Predicting the performance of QDLEDs can lead to better and more efficient design of the device. In this paper, we have attempted to investigate the dependence of the device performance on the location of quantum dots (QDs) and determine the best location for the QDs in the QDLEDs. The QDs are located in five different position and results are compared with each other. The results show that the closer the QDs to the hole transport layer (HTL), the better the luminescence. This improvement can be explained by the two charge transport mechanism, direct charge injection and exciton energy transfer.