A 0.29-/spl mu/m/sup 2/ MIM-CROWN cell and process technologies for 1-gigabit DRAMs

Toru Kaga,Yoshimi Sudoh,H. Goto,K. Shoji,T. Kisu,H Yamashita,Ryo Nagai,Shinpei Iijima,Makoto Ohkura,Fumio Murai,Toshihiko Tanaka,Yasushi Goto,Natsuki Yokoyama,Masashi Horiguchi,Masanori Isoda,T. Nishida,Eiji Takeda

A 0.29-/spl mu/m/sup 2/ MIM-CROWN cell and process technologies for 1-gigabit DRAMs

1994

Toru Kaga
Yoshimi Sudoh
H. Goto
K. Shoji
T. Kisu
H Yamashita
Ryo Nagai
Shinpei Iijima
Makoto Ohkura
Fumio Murai
Toshihiko Tanaka
Yasushi Goto
Natsuki Yokoyama
Masashi Horiguchi
Masanori Isoda
T. Nishida
Eiji Takeda

In keeping with the trend of reducing DRAM cell area, with a target for 1-gigabit DRAMs of less than 0.3 /spl mu/m/sup 2/, the authors have developed a 0.29-/spl mu/m/sup 2/ metal/insulator/metal crown-shaped capacitor (MIM-CROWN) cell with low height by using 0.16-/spl mu/m process technologies. >

Keywords:

Capacitor
Gigabit
Physics
Insulator (electricity)
Electronic engineering
Electrical engineering
Optoelectronics
Dram

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