Old Web
English
Sign In
Acemap
>
Paper
>
Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure
Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure
2019
A.S. Tarasov
A. V. Lukyanenko
M. V. Rautskii
I.A. Bondarev
Dmitry A. Smolyakov
I. A. Tarasov
I.A. Yakovlev
S. N. Varnakov
S. G. Ovchinnikov
F. A. Baron
N. V. Volkov
Keywords:
Condensed matter physics
Doping
Spin-½
Chemistry
Correction
Source
Cite
Save
Machine Reading By IdeaReader
55
References
10
Citations
NaN
KQI
[]