Vapour growth of multilayered GaAs structures for series operation of transferred-electron oscillators

Series operation of GaAs transferred-electron oscillators has been obtained by the in situ vapour growth of n+-n-n+-n-n+ structures. Devices fabricated from this structure have operated at n/f ratios as high as 3.2 × 105 s cm-3 and have yielded conversion efficiencies as high as 13.5% at 4.0 GHz.