Initial stage of condensation of C60 films on semiconducting substrates of different chemical nature.

Abstract Conditions of growing C60 films deposited from the gas‐dynamic vapor flow on different substrates [layered GaSe substrates with inactive surface, AIIBVI (CdS, CdSe) crystals, silicon substrates of (1 1 1) orientations, porous Si substrate] are studied. The condensate structure and growth mechanisms for different substrate are compared. It is shown that the high‐quality epitaxial films of the fullerenes can be prepared by using GaSe layered crystals as substrates.