Behavior of Oxygen in Ga-As Melts with the Range of As Content up to 5 mass% Equilibrated with B2O3 Flux

The equilibrium between Ga-As melt, containing arsenic up to 5 mass%, and B 2 O 3 flux was investigated from 1273 to 1523 K in a silica ampoule. The effect of arsenic on equilibrium contents of oxygen, boron and silicon in the melt was investigated. The results were analyzed using interaction parameters. The equilibrium distribution ratio of oxygen between Ga-As melt and B 2 O 3 flux decreased with the increase of temperature, Ga 2 O 3 content in the flux and arsenic content in the melt. The activity of Ga 2 O 3 in the B 2 O 3 flux was determined in the temperature range from 1273 to 1523 K, which is relevant to the practical process of crystal growth of GaAs.