Bulk photovoltaic effect in nonuniformly doped semiconductors

The bulk photovoltaic effect in nonuniformly doped semiconductors with specified conduction type under weak charge carrier injection was investigated. It was revealed that the photo emf was a complicated, usually nonmonotonic function of the built-in electric fled strength and the stretched potential barrier width. It was shown that the bulk effect could be used in developing the procedures for semiconductor-parameter determination and might form the basis for the production of efficient photoconverters.