Spin polarized electroluminescence and spin photocurrent in hybrid semiconductor/ferromagnetic heterostructures: an asymmetric problem
2011
The photocurrent obtained under polarized optical excitation and the polarized electroluminescence recorded under
forward electric bias have been measured in the same hybrid Semiconductor/Ferromagnetic metal structures (Spin-Light
Emitting Diode). Systematic investigations have been performed on devices with different ferromagnetic spin injectors,
consisting e.g. of MgO tunnel barriers with a CoFeB ferromagnetic layer. Though a very efficient electrical spin
injection is demonstrated, very weak polarization of the photocurrent is evidenced: the photocurrent polarization
measured under continuous resonant circularly polarized excitation of the quantum well excitons is below 3%. This
demonstrates that the investigated devices do not act as efficient spin filters for the electrons flowing from the
semiconductor part to the ferromagnetic part of these structures though these systems are very efficient spin aligners for
electrical spin injection. We interpret the weak measured photocurrent polarization of the as a consequence of the
Zeeman splitting of the quantum well excitons which yields different absorption coefficients for the polarized excitation
laser with different helicities. This leads to different intensities of photocurrent collected for the two different circularly
polarized excitations. This interpretation is confirmed by an experiment exhibiting the same results for photocurrent
measured on a device with a non ferromagnetic electrical contact.
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